Data for reference park-jjap-39-l1141

Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy

S. S. Park, Ii-W. Park, S. H. Choh

Japanese Journal of Applied Physics 39, L1141 (2000).

This item is cited by the following items in the database:

  1. Dislocation Density of GaN Grown by Hydride Vapor Phase Epitaxy

Contributed by A submitted manuscript, on Friday, April 6, 2001 1:30:12 PM

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