Data for reference nakamura-jjap-38-l226

Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50 Degrees C with a Fundamental Transverse Mode,

S. Nakamura, M. Senoh, I. S. Nagahama, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, T. Mukai

Japanese Journal of Applied Physics 38, L226 (1999).

This item is cited by the following items in the database:

  1. Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates

Contributed by A submitted manuscript, on Tuesday, September 25, 2001 6:26:22 PM

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