Data for reference kelly-jjap-38-l217

Large Free-Standing GaN Substrates by Hydride Phase Epitaxy and Laser-Induced Liftoff.

M. Kelly, R. Vaudo, V. Phanse, L. Gorgens, O. Ambacher, M. Stutzman

Japanese Journal of Applied Physics 38, L217 (1999).

This item is cited by the following items in the database:

  1. Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)

Contributed by A submitted manuscript, on Tuesday, September 14, 1999 2:30:14 PM

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