Data for reference grandjean-jjap-38-618Molecular beam epitaxy of GaN under N-rich conditions using NH3
N. Grandjean, M. Leroux, J. Massies, M. Mesrine, M. Laught
Japanese Journal of Applied Physics 38(2A), 618 (1999).
The authors report on properties improvement of GaN grown under higher V/III ratio
This item is cited by the following items in the database:
- The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
Contributed by A submitted manuscript, on Tuesday, May 4, 1999 9:56:04 AM
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