Data for reference mukai-jjap-38-3976

Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

T. Mukai, M. Yamada, S. Nakamura

Japanese Journal of Applied Physics 38(7A), 3976 (1999).

This item is cited by the following items in the database:

  1. The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1-xN quantum wells

Contributed by A submitted manuscript, on Friday, January 21, 2000 5:46:30 PM

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