Data for reference grandjean-jjap-37-l907

Violet InGaN/GaN light emitting diodes grown by molecular beam epitaxy using NH3

N. Grandjean, J. Massies, M. Leroux, Ph. Lorenzini

Japanese Journal of Applied Physics 37(8A), L907 (1998).

The authors report on characteristics of the violet LED grown by MBE using NH3

This item is cited by the following items in the database:

  1. The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia

Contributed by A submitted manuscript, on Tuesday, May 4, 1999 9:55:49 AM

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