Data for reference nakamura-jjap-37-l627

Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho

Japanese Journal of Applied Physics 37, L627 (1998).

This item is cited by the following items in the database:

  1. Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
  2. Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.

Contributed by A submitted manuscript, on Friday, January 15, 1999 12:33:27 AM

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