nishida-jjap-37-l459

Data for reference nishida-jjap-37-l459

Step-Flow Metalorganic Vapor Phase Epitaxy of GaN on SiC Substrates

T Nishida, T Akasaka, N Kobayashi

Japanese Journal of Applied Physics 37(4B), L459 (1998).

Metalorganic Vapor Phase Epitaxy (MOVPE) growth of GaN on SiC substrates is dominated by the step-flow growth mode within a 10 痠² area. Compared to the growth on sapphire substrates, there is no spiral growth originating from screw dislocations and two dimensional islands within the 10 痠² area, showing that the step-flow growth mode is dominant. The surface mostly consists of 140-nm-wide atomic terraces and doubly stacked monolayers (DSM) corresponding to a unit cell height. This coupling of DSM dissolves into a pair of monolayer steps at the adjacent DSM steps forming a twilled step (TWS) structure, due to the asymmetry between these two layers in a GaN unit cell.

This item is cited by the following items in the database:

Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

Contributed by A.E. Nikolaev from 157.197.128.233 on June 12, 1998 6:06:14 AM

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