sugahara-jjap-37-l398

Data for reference sugahara-jjap-37-l398

Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

T Sugahara, H Sato, M Hao, Y Naoi, S Kurai, S Tottori, K Yamashita, K Nishino, LT Romano, S Sakai

Japanese Journal of Applied Physics 37(4A), L398 (1998).

Plan-view transmission electron microscopy (TEM) and cathodoluminescence (CL) images were taken for the same sample at exactly the same location in n-type GaN grown on sapphire substrate by metalorganic chemical vapor deposition (MOCVD). There was a clear one to one correspondence between the dark spots observed in CL images and the dislocations in TEM foils, indicating that the dislocations are non-radiative recombination centers. The hole diffusion length in n-type GaN was estimated to be neighboring 50 nm by comparing the diameters of the dark spots in thick samples used for CL and samples that were thinned for TEM observation. The efficiency of light emission is high as long as the minority carrier diffusion length is shorter than the dislocation spacing.

This item is cited by the following items in the database:

Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Contributed by A.E. Nikolaev from 157.197.128.233 on June 12, 1998 5:54:09 AM

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