Data for reference iwaya-jjap-37-l316Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
M Iwaya, T Takeuchi, S Yamaguchi, C Wetzel, H Amano, I Akasaki
Japanese Journal of Applied Physics 37(3B), L316 (1998).
The etch pit density of organometallic vapor phase epitaxy (OMVPE)-grown GaN on sapphire was discovered to reduce drastically by the insertion of either a
low-temperature-deposited AlN buffer layer or GaN buffer layer between high-temperature-grown-GaN on sapphire.
This item is cited by the following items in the database:
- Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
- On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
Contributed by A.E. Nikolaev from 157.197.128.233 on June 12, 1998 5:49:21 AM
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