shim-jjap-37-l313

Data for reference shim-jjap-37-l313

Evolution of Surface Morphology and Strain in Low-Temperature AlN Grown by Plasma-Assisted Molecular Beam Epitaxy

KH Shim, J Myoung, O Gluschenkov, K Kim, C Kim, IK Robinson

Japanese Journal of Applied Physics 37(3B), L313 (1998).

The evolution of stress-driven surface roughening in low-temperature (LT) grown AlN has been investigated in a wide range of film thicknesses using plasma assisted molecular beam epitaxy and atomic force microscopy analysis. The relaxation of residual strain causing morphological instability after ~ 50 nm thickness represents the kinetic stabilization of LT growth. LT-AlN layers with thicknesses of ~ 20 nm provide excellent surface smoothness of <0.9 nm and large relaxation, ~ 94% of the lattice mismatch strain. AlN films thicker than 50 nm, for which the scaling exponents are greater than 1, revealed stress-driven surface roughening with coherent islands. The implementation of thick LT-AlN buffer layers is limited by the stress-driven surface roughening above ~ 50 nm thickness.

Contributed by A.E. Nikolaev from 157.197.128.233 on June 12, 1998 5:48:13 AM

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