High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates

Japanese Journal of Applied Physics 37(3B), L309 (1998).

Epitaxially laterally overgrown GaN on sapphire was used to reduce the number of threading dislocations originating from the interface of the GaN epilayer with the sapphire substrate. The GaN layer above the SiO₂ mask area surrounding the window, corresponding to the lateral overgrowth, was nearly free of the threading dislocations. A high density of threading dislocations was observed in the vicinity of GaN grown in the window regions. InGaN multi-quantum-well-structure laser diodes (LDs) grown on pure GaN substrates, which were fabricated by removing the sapphire substrate, were demonstrated. The LDs with an output power of 5 mW exhibited a lifetime of more than 290 h and an estimated lifetime of 10,000 h despite a relatively large threshold current density. The far-field pattern of the LDs with a cleaved mirror facet revealed single-mode emission without any interference effects.

This item is cited by the following items in the database:

1. Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.
2. Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates

Contributed by A.E. Nikolaev from 157.197.128.233 on June 12, 1998 5:44:01 AM

last updated Wednesday, April 27, 2005 5:44:27 PM.
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