park-jjap-37-l294

Data for reference park-jjap-37-l294

Growth of GaN on Indium Tin Oxide/Glass Substrates by RF Plasma-Enhanced Chemical Vapor Deposition Method

D Park, H Ko, S Fujita, S Fujita

Japanese Journal of Applied Physics 37(3A), L294 (1998).

The GaN thin films were grown at a low substrate temperature (500°C) by radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (RF PECVD) on glass substrates deposited with indium tin oxide (ITO) thin films. The growth of a thin buffer layer at 200°C improved the sample quality. Highly oriented polycrystalline GaN, where the (0002) planes were parallel to the substrate surface, was identified by X-ray diffraction (XRD) measurement. The surface orientation was strongly dependent on the growth parameters. Surface morphology observed by atomic force microscopy (AFM) showed the hexagonal columnar structure of the GaN thin films.

Contributed by A.E. Nikolaev from 157.197.128.233 on June 12, 1998 5:37:52 AM

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