Data for reference kuramata-jjap-37-l1373

Room-Temperature Continuous Wave Operation of InGaN Laser Diodes with Vertical Conducting Structure on SiC Substrate

A. Kuramata, S. I. Kubota, R. Soejima, K. Domen, K. Horino, T. Tanahashi

Japanese Journal of Applied Physics 37, L1373 (1998).

This item is cited by the following items in the database:

  1. Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System

Contributed by A submitted manuscript, on Saturday, January 9, 1999 2:24:31 PM

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