kimura-jjap-37-l1231

Data for reference kimura-jjap-37-l1231

Room-Temperature Pulsed Operation of GaN-Based Laser Diodes on a-Face Sapphire Substrate Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

Y. Kimura, M. Miyachi, K. Takahashi, T. Tanaka, M. Nishitsuka, A. Watanabe, H. Ota, K Chikuma

Japanese Journal of Applied Physics 37, L1231 (1998).

This item is cited by the following items in the database:

Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System

Contributed by A submitted manuscript, on Tuesday, January 19, 1999 11:25:43 AM

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