youn-jjap-37-1768

Data for reference youn-jjap-37-1768

Ohmic Contact to P-Type GaN

DH Youn, M Hao, H Sato, T Sugahara, Y Naoi, S Sakai

Japanese Journal of Applied Physics 37(4A), 1768 (1998).

Investigations of the new metal scheme for ohmic contact to p-GaN have been carried out. The specific contact resistance was measured to be \zeta c=3.6� 10-3 \Omega cm2 which is the lowest value ever reported for moderately doped p-GaN (4.4� 1017/cm3). All metals were deposited on metalorganic chemical vapour deposition (MOCVD) grown p-GaN. The interaction mechanism between Ni and p-GaN has been investigated. Zn diffusion has been observed during annealing in Au-Zn/Ni on p-GaN. The interfacial reaction mechanism during annealing has been studied by secondary ion mass spectroscopy (SIMS) measurement. From this measurement, it is observed that Ni dissociates at the p-GaN surface and this dissociation promotes the Zn diffusion upon heat treatment. The electrical properties were studied using current-voltage (I-V) measurements at room temperature. The microstructure between the Ni and p-GaN interface was investigated using high-resolution transmission electron microscopy (TEM) before and after the heat treatment.

Contributed by A.E. Nikolaev from 157.197.128.233 on June 12, 1998 7:20:45 AM

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