Data for reference mukai-jjap-37-1358Current and temperature dependence of electroluminescence of InGaN-based UV/blue/green light-emitting diodes
T. Mukai, M. Yamada, S. Nakamura
Japanese Journal of Applied Physics 37(11B), 1358 (1998).
This item is cited by the following items in the database:
- The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1-xN quantum wells
Contributed by A submitted manuscript, on Monday, December 13, 1999 11:55:48 PM
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