Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

Japanese Journal of Applied Physics 36(7B), L899 (1997).

Thick GaN layers were grown by hydride vapor phase epitaxy (HVPE) with the aim of using these layers as a homoepitaxial substrate to improve device quality of laser diodes or light emitting diodes. HVPE is very useful for thick layer growth since the growth rate can reach from several ten up to one hundred micron per hour. In this experiment, the growth began as selective growth through openings formed in a SiO₂ mask. Facets consisting of {1101} planes were formed in the early stage and a continuous film developed from the coalescence of these facets on the SiO₂ mask. As a result, GaN layers with a dislocation density as low as 6 x 10⁷,cm^-2 were grown on 2-inch-diameter sapphire wafers. These GaN layers were crack-free and had mirror-like surface.

This item is cited by the following items in the database:

1. Defect structure in selectively grown GaN films with low threading dislocation density
2. Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
3. Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
4. Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
5. Localized Epitaxy of GaN by HVPE on patterned Substrates
6. Current status of GaN crystal growth by sublimation sandwich technique
7. Dislocation Density of GaN Grown by Hydride Vapor Phase Epitaxy
8. Hardness of bulk single-crystal GaN and AlN
9. Review of polarity determination and control of GaN

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on September 18, 1997 2:19:33 PM

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