Data for reference niwa-jjap-36-l771Theoretical Analysis of the Threshold Current Density in GaN/AlGaN Strained QW Lasers with a Modulation-doped Structure
A. Niwa, T. Ohtoshi, T. Kuroda
Japanese Journal of Applied Physics 36(6B), L771 (1997).
This item cites the following items in the database:
- Room Temperature CW Operation of InGaN MQW Structure Laser Diodes
- First-principles calculations of effective-mass parameters of AlN and GaN
- Crystal Orientation Effect on Valence-Subband Structures in Wurtzite-GaN Strained Quantum Wells
- Strain Effect on electronic and optical properties of GaN/AlGaN QW Lasers
Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Friday, July 4, 1997 7:15:15 AM
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