Data for reference koukitu-jjap-36-l750

Thermodynamic Analysis on Molecular Beam Epitaxy of GaN, InN and AlN

A. Koukitu, H. Seki

Japanese Journal of Applied Physics 36(6B), L750 (1997).

This item cites the following items in the database:

  1. Thermodynamic Analysis of MOVPE growth of InGaN

This item is cited by the following items in the database:

  1. Novel approach to simulation of group-III nitrides growth by MOVPE

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Friday, July 4, 1997 7:08:44 AM

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