Data for reference takahashi-jjap-36-l743

Growth of InN at High Temperature by HVPE

N. Takahashi, R. Matsumoto, A. Koukitu, H. Seki

Japanese Journal of Applied Physics 36(6B), L743 (1997).

InN was grown by HVPE at 0.2 micron/hr at 750C using a high partial pressure of Indiumtrichloride.

This item cites the following items in the database:

  1. Preparation of InN epitaxial layers in InCl3-NH3 system
  2. Heteroepitaxial growth of InN by microwave-excited metalorganic chemical vapor phase epitaxy
  3. Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytype
  4. New Epitaxial Growth Method of Cubic GaN on (100)GaAs Using (ch3)(3)ga, HCl and Nh3

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Friday, July 4, 1997 6:59:46 AM

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