Data for reference takahashi-jjap-36-l601

VPE of InxGa1-xN using InCl3, GaCl3 and NH3 sources

N. Takahashi, R. Matsumoto, A. Koukitu, H. Seki

Japanese Journal of Applied Physics 36(5B), L601 (1997).

Halide vapor phase epitaxy of InGaN/sapphire.

This item cites the following items in the database:

  1. New Epitaxial Growth Method of Cubic GaN on (100)GaAs Using (ch3)(3)ga, HCl and Nh3
  2. Thermodynamic Analysis of MOVPE growth of InGaN
  3. Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Tuesday, June 24, 1997 8:41:36 AM

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