Crystalline Structure changes in GaN Films Grown at Different Temperatures

Japanese Journal of Applied Physics 36(5B), L598 (1997).

This item cites the following items in the database:

1. High quality AlN and GaN epilayers grown on (00.1) sapphire, (100), and (111) silicon substrates
2. The Role of the Low Temperature Buffer Layer and Layer Thickness in the Optimization of OMVPE Growth of GaN on Sapphire
3. Analysis of two-step-growth conditions for GaN on an AlN buffer layer
4. Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAs
5. Basic Studies of Gallium Nitride Growth on Sapphire by Metalorganic Chemical Vapor Deposition and Optical Properties of Deposited Layers
6. Optical properties and temperature dependence of the interband transitions of cubic and hexagonal GaN
7. GaN Growth Using GaN Buffer Layer
8. Mechanism of yellow luminescence in GaN
9. Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition
10. Fundamental optical transitions in GaN
11. Donor-acceptor pair recombination in GaN
12. Investigation of longitudinal-optical phonon-plasmon coupled modes in highly conducting bulk GaN
13. Comparative Raman studies of cubic and hexagonal GaN epitaxial layers
14. Quantitative determination of hexagonal minority phase content in cubic GaN using Raman spectroscopy
15. Influence of moisture and oxygen on the formation of cubic phase GaN in halide vapor phase epitaxial growth
16. Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Tuesday, June 24, 1997 9:08:57 AM

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