Data for reference sato-jjap-36-l595

Epitaxial Growth of InN by Plasma-assisted MOCVD

Michio Sato

Japanese Journal of Applied Physics 36(5B), L595 (1997).

InN epitaxial films were grown on (0001) sapphire substrates by plasma-assisted metalorganic chemical vapor deposition, by which large amounts of radicals can be supplied to a surface with less ion damages, using triethylindium and nitrogen radicals as the precursors. When argon was used as a carrier gas, InN having a rough surface with a lot of indium droplets was grown. When hydrogen was used, the InN surface was specular and few droplets were found. InN was grown in hydrogen at a low temperature of 400 C where no growth occurred in argon. These results suggest that the carrier gas influences the InN growth and that hydrogen enhances both the decomposition of organometallics and the removal of excess metal atoms at the growing surface.

This item cites the following items in the database:

  1. Electron mobility in indium nitride
  2. Optical band gap of indium nitride
  3. Wide-gap Semiconductor (In,Ga)N
  4. Epitaxial growth of indium nitride
  5. Growth of InN by chloride-transport VPE
  6. Highly resistive CH-doped GaN grown by plasma-assisted metalorganic chemical vapor deposition
  7. Plasma-assisted low-pressure metalorganic chemical vapor deposition of GaN on GaAs substrates

Contributed by A.E. Nikolaev from pp-12.convey.ru. on Saturday, June 21, 1997 10:07:38 AM
Modified by S. Strite from internet-gateway-x.zurich.ibm.com. on Tuesday, June 24, 1997 9:20:18 AM

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