Growth of GaN and Al_0.2Ga_0.8N on Patterened Substrates via Organometallic Vapor Phase Epitaxy

Japanese Journal of Applied Physics 36(5A), L532 (1997).

The selective growth of GaN and Al_0.2Ga_0.8N has been achieved on stripe and circular patterned GaN/AlN/6H-SiC(0001) multilayer substrates. Growth morphologies on the stripe patterns were a function of the widths of the stripes and the flow rate of triethylgallium. No ridge growth was observed along the top edges of the truncated stripe patterns. Smooth (0001) op facets formed on stripes > 5 µm wide . Uniform hexagonal pyramid arrays of undoped GaN and Si-doped GaN were successfully grown on 5 µm circular patterns. Field emission measurements of a Si-doped GaN hexagonal pyramid array exhibited a turn-on field of 25 V/µm for an emission current of 10.8nA at an anode-to-sample distance of 27 µm.

This item is cited by the following items in the database:

1. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
2. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
3. Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
4. Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
5. Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Friday, June 20, 1997 2:14:47 PM

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