Data for reference takeuchi-jjap-36-l382

Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, I. Akasaki

Japanese Journal of Applied Physics 36, L382 (1997).

This item is cited by the following items in the database:

  1. The Polarity of GaN: a Critical Review
  2. The role of piezoelectric fields in GaN-based quantum wells
  3. On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
  4. Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures
  5. Development of High Power Green Light Emitting Diode Chips

Contributed by A submitted manuscript, on Tuesday, May 19, 1998 5:13:28 PM


If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.


MRS Internet Journal of Nitride Semiconductor Research

last updated Thursday, September 22, 2005 2:57:28 PM.
© 1998 The Materials Research Society