Data for reference takeuchi-jjap-36-l177

Optical Properties of Strained AlGaN and GaInN on GaN

T Takeuchi, H Takeuchi, S Sota, H Sakai, H Amano, I Akasaki

Japanese Journal of Applied Physics 36(2B), L177 (1997).

The composition of alloys in strained ternary alloy layers, AlxGa1-xN (0<x<0.25) and Ga1-xInxN (0<x<0.20), on thick GaN was precisely determined using the high-resolution X-ray diffraction profile. The band gap of strained AlGaN is found to increase almost linearly according to the AlN molar fraction, while that of strained GaInN has a large bowing parameter of 3.2eV.

This item is cited by the following items in the database:

  1. On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
  2. Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures
  3. Influence of Poisson’s ratio uncertainty on calculations of the bowing parameter for strained InGaN layers

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Friday, June 20, 1997 12:46:01 PM

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