Data for reference uesugi-jjap-36-l1572

Bandgap energy of GaNAs alloys grown on (001) GaAs by metalorganic molecular beam epitaxy

K. Uesugi, I. Suemune

Japanese Journal of Applied Physics 36, L1572 (1997).

This item is cited by the following items in the database:

  1. Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry
  2. Electronic Properties of Ga(In)NAs Alloys

Contributed by A submitted manuscript, on Friday, March 3, 2000 9:38:00 AM

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