Data for reference nakamura-jjap-36-l1568

InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-LayerSuperlattices

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho

Japanese Journal of Applied Physics 36, L1568 (1997).

This item is cited by the following items in the database:

  1. 300°ree;C GaN/AlGaN Heterojunction Bipolar Transistor
  2. Valence-band structure of wurtzite GaN including the spin-orbit interaction
  3. Effect of Photo-Assisted RIE Damage on GaN

Contributed by A submitted manuscript, on Wednesday, October 21, 1998 10:38:56 AM

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