Data for reference xue-jjap-36-l1486

Initial Stages of Cubic GaN Growth on the GaAs(001) Surface Studied by Scanning Tunneling Microscopy

Q. K. Xue, Q. Z. Xue, Y. Hasegawa, I. S. T. Tsong, T. Sakurai

Japanese Journal of Applied Physics 36, L1486 (1997).

This item is cited by the following items in the database:

  1. Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio

Contributed by A submitted manuscript, on Wednesday, July 1, 1998 12:23:16 PM

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