Data for reference vezin-jjap-36-l1483

Growth of Ga1-xBxN by Molecular Beam Epitaxy

Vincent Vezin, Satoshi Yatagai, Hiroyuki Shiraki, Satoshi Uda

Japanese Journal of Applied Physics 36(11B), L1483 (1997).

Pseudabinary compounds of column III elements and nitrogen are semiconductors widely studied for opto-electronic apllications. Ga(1-x)B(x)N componds are considered to be prone to phase separation due to the large difference in bond length between B-N and Ga-N. However if a sufficient amount of boron can be incorporated to Ga(1-x)B(x)N compounds, lattice matching with substrates such as SiC, AlN and Ga(1-x)Al(x)N may be achieved. We used molecular beam epitaxy to grow Ga(1-x)B(x)N films on sapphire c face with various values of x. Single-phase wurtzite Ga(1-x)B(x)N with x up to 4.56% has been obtained.

This item cites the following items in the database:

  1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
  2. High-Power High-Temperature Heterobipolar TransistorWith Gallium Nitride Emitter
  3. Growth of boron nitride films by gas molecular-beam epitaxy Growth of boron nitride films by gas source MBE
  4. Growth of GaBN Ternary Solutions by Organometallic Vapor Phase Epitaxy

Contributed by Vincent Vezin from 202.218.35.4 on December 27, 1997 2:09:19 AM

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