takahashi-jjap-36-l1133

Data for reference takahashi-jjap-36-l1133

Growth of GaN on GaAs(111)B by Metalorganic Hydrogen Chloride VPE Using Double Buffer Layer

N Takahashi, S Matsuki, A Koukitu, H Seki

Japanese Journal of Applied Physics 36(9AB), L1133 (1997).

GaN epitaxial layers were grown by metalorganic hydrogen chloride vapor phase epitaxy (MOH-VPE) using double GaN buffer layers on GaAs substrate. In this method, the first GaN buffer layer was deposited on GaAs(111)B substrate at 550^oC, and after annealing at 850^oC for 10min, the second buffer layer was deposited at 500^oC. Then the GaN epitaxial layer was grown at 850^oC. The X-ray full width at half maximum (FWHM) value of the obtained hexagonal GaN was smaller than that of a GaN epitaxial layer with a single buffer layer. The room temperature photoluminescence spectra exhibited a strong peak at approximately 361.5nm.

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on November 23, 1997 5:22:26 AM

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