tanaka-jjap-36-l1062

Data for reference tanaka-jjap-36-l1062

Morphology and X-Ray Diffraction Peak Widths of Aluminum Nitride Single Crystals Prepared by the Sublimation Method

M Tanaka, S Nakahata, K Sogabe, H Nakata, M Tobioka

Japanese Journal of Applied Physics 36(8B), L1062 (1997).

AlN single crystal is one of the promising materials for substrates of GaN-based laser diodes. We prepared aluminum nitride single crystals by the sublimation method and characterized them. The crystals are transparent and slightly ellow. Some crystals are needle-shaped with a hexagonal cross section, diameter of 0.5mm and length of 3mm, grown parallel to |001|. Other crystals are plate-shaped with a maximum width of 3mm, 5mm length and 0.5mm thickness, grown with a large (001) face. Also, other crystals are needle-shaped with a rectangular cross section, width of 1mm, 7mm length and 0.3mm thickness, grown with a large (101) face. Their widths of X-ray rocking curves is about 39arcsec, with a full width at half-maximum, 203arcsec and 12arcsec, respectively. The orientation of AlN single crystal axis is sufficient for use in substrates for GaN-based diodes.

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