Data for reference nakamura-jjap-36-l1059

High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku

Japanese Journal of Applied Physics 36, L1059 (1997).

This item is cited by the following items in the database:

  1. GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
  2. Uniaxial Strain Effect on the Electronic and Optical Properties of Wurtzite GaN/AlGaN Quantum Well Lasers
  3. High-temperature structural behavior of Ni/Au Contact on GaN(0001)

Contributed by A submitted manuscript, on January 5, 1998 9:51:38 AM

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