Data for reference sato-jjap-36-4295

Hydride Vapor Phase Epitaxy of InxGa1-xN Thin Films

Y Sato, S Sato

Japanese Journal of Applied Physics 36(7A), 4295 (1997).

In this paper, we investigate the growth of InxGa1-xN thin films using the hydride vapor phase epitaxy (HVPE) method. Indium is hardly contained in films grown at higher growth temperatures, and phase separation tendencies between InN and GaN are observed in some grown films. In their photoluminescence spectra measured at room temperature, two peaks are observed at 370nm and 430-440nm.

This item is cited by the following items in the database:

  1. Suppression of phase separation in InGaN due to elastic strain

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on September 18, 1997 3:02:52 PM

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