Data for reference shimuzu-jjap-36-3381

MOVPE of Thick InGaN on Sapphire Substrate

M. Shimuzu, Y. Kawaguchi, K. Hiramatsu, N. Sawaki

Japanese Journal of Applied Physics 36(6A), 3381 (1997).

This item cites the following items in the database:

  1. Superbright Green InGaN Single-Quantum-Well-Structure Light-Enmitting Diodes
  2. Candela-class high-brightness InGaN/AlGaN double- heterostructure blue-light-emitting diodes
  3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
  4. Wide-gap Semiconductor (In,Ga)N
  5. Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy
  6. High-Quality InGaN Films Grown on GaN Films
  7. Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature
  8. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
  9. GaN Growth Using GaN Buffer Layer
  10. Growth of single crystal GaN substrate using hydride vapor phase epitaxy

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Friday, July 4, 1997 7:31:39 AM

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