sato-jjap-36-2671

Data for reference sato-jjap-36-2671

Room-Temperature operation of GaInNAs/GaInP DH Laser Diodes grown by MOCVD

S. Sato, Y. Osawa, T. Saitoh

Japanese Journal of Applied Physics 36(5A), 2671 (1997).

Latticed matched heterostructures incorporating as much as 4% N are used to achieve lasing at 1.17 micron and LEDs out to 1.45 micron.

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Tuesday, June 24, 1997 8:32:21 AM

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