ishibashi-jjap-36-1961

Data for reference ishibashi-jjap-36-1961

Metalorganic Vapor Phase Epitaxy Growth of a High-Quality GaN/InGaN Single Quantum Well Structure Using a Misoriented SiC Substrate

A Ishibashi, H Takeishi, N Uemura, M Kume, Y Yabuuchi, Y Ban

Japanese Journal of Applied Physics 36(3B), 1961 (1997).

A high-quality GaN/InGaN single quantum well (SQW) structure has been successfully grown using a misoriented 6H-SiC substrate, the face of which is tilted from (0001) toward [1120] by 3.5^o, by low pressure metalorganic vapor phase epitaxy (MOVPE). A sharp emission, whose full-width at half maximum (FWHM) was 24.3meV, from the GaN/InGaN SQW structure was observed at 385nm in the 77K photoluminescence spectrum. From the transmission electron microscopy (TEM) analysis, the dislocations in the GaN film grown on the misoriented substrate were bent from the c-direction, and the threading dislocations to the InGaN film on the GaN film were decreased. For the InGaN film grown on the misoriented substrate, only the sharp band edge emission, whose FWHM was 92.3meV, was observed at 385nm in the PL spectrum at 77K. The dislocation density, which was estimated from TEM photographs, in the InGaN film on the GaN film grown on the misoriented substrate was about 5 x 10⁸cm^-2, which was nearly half of that grown on the (0001) substrate.

This item is cited by the following items in the database:

Properties of GaN epilayers grown on misoriented sapphire substrates

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Friday, June 20, 1997 3:13:09 PM

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