Data for reference sunakawa-jjap-35-l1395

Growth of InN by chloride-transport VPE

H. Sunakawa, A. Yamaguchi, A. Kimura, A. Usui

Japanese Journal of Applied Physics 35(11A), l1395 (1996).

Hexagonal single crystalline InN films are grown on a h-GaN epitaxial layer in a GaAs(100) substrate by chloride-transport VPE. It is found that lower temperatures for the upstream region of the reactor, where indium chloride is generated, are crucial for InN growth. In addition, the use of inert gas such as nitrogen, is necessary for growth. Based on these results, the necessity of InCl3 as a sournce material is emphasized for InN growth. The grown film reveals a hexagonal structure whose c-axis orients to the GaAs (111)B direction.

This item cites the following items in the database:

  1. Optical band gap of indium nitride

This item is cited by the following items in the database:

  1. Epitaxial Growth of InN by Plasma-assisted MOCVD

Contributed by S. Strite from internet-gw.zurich.ibm.ch. on Tuesday, December 24, 1996 8:28:06 AM

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