Data for reference itaya-jjap-35-l1315

Room Temperature pulsed operation of nitride based MQW laser diodes with cleaved facets on conventional c-face sapphire substrates

K. Itaya, M. Onomura, J. Nishio, L. Sugiura, S. Saito, M. Suzuki, J. Rennie, S. Nunoue, M. Yamamato, H. Fujimoto, Y. Kokobun, Y. Ohba, G. Hatakoshi, M. Ishikawa

Japanese Journal of Applied Physics 35(10B), l1315 (1996).

We demonstrate room temperature pulsed operation of nitride based MQW laser diodes with cleaved mirror facets grown on a conventional c-face sapphire substrate. Cleaveage was performed along the < 1 1 2bar 0 > direction of the sapphire substrate, and the resultant facet was analyzed using an AFM and theoretical calculations. A single peak emission, at a wavelength of 417.5 nm, with a FWHM of 0.15 nm, was obtained. The threshold current density of the laser was 50 kA/cm2 and a voltage for the threshold was 20V.

This item cites the following items in the database:

  1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
  2. InGaN MQW Structure Laser Diodes with Cleaved Mirror Facets
  3. InGaN multi-quantum-well structure laser diodes grown on MgAl2O4 substrates

This item is cited by the following items in the database:

  1. Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
  2. Characterization of InGaN MQW structures for blue semiconductor laser diodes
  3. Urbach-Martienssen tails in a wurtzite GaN epilayer
  4. Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC
  5. Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
  6. GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
  7. Defect structure in selectively grown GaN films with low threading dislocation density
  8. Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System

Contributed by S. Strite from internet-gw.zurich.ibm.ch. on Tuesday, December 24, 1996 8:36:38 AM

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