yamaguchi-jjap-35-l873

Data for reference yamaguchi-jjap-35-l873

Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy

AA Yamaguchi, T Manako, A Sakai, H Sunakawa, A Kimura, M Nido, A Usui

Japanese Journal of Applied Physics 35(7B), L873 (1996).

Hexagonal GaN (h-GaN) films are grown on GaAs (100) vicinal substrates by hydride vapor phase epitaxy. The substrate misorientation dependence of the crystal structure is investigated by X-ray diffraction measurements using a 4-circle diffractometer. It is found that misorientation toward the 111 B direction is essential for the growth of single domain h-GaN films and that the c-axis of the single domain h-GaN orients to the GaAs 111 B direction.

This item is cited by the following items in the database:

VPE of In_xGa_1-xN using InCl₃, GaCl₃ and NH₃ sources

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Sunday, October 13, 1996 2:46:39 PM

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