Data for reference okada-jjap-35-l787

Biexciton luminescence from GaN epitaxial layers

K Okada, Y Yamada, T Tagushi, F Sasaki, S Kobayashi, T Tani, S Nakamura, G Shinomiya

Japanese Journal of Applied Physics 35(6B), L787 (1996).

This item is cited by the following items in the database:

  1. Optical nonlinearities of Gallium Nitride
  2. Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN
  3. Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.
  4. Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Contributed by P. Lefebvre from lefebvre.ges.univ-montp2.fr. on Wednesday, June 4, 1997 9:36:55 AM

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