Data for reference nakamura-jjap-35-l74

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

S Nakamura, M Senoh, S Nagahama, N Iwasa, T Yamada, T Matsushita, H Kiyoku, Y Sugimoto

Japanese Journal of Applied Physics 35(1B), L74 (1996).

InGaN multi-quantum-well (MQW) structure laser dioded (LDs) fabricated from III-V nitride materials were grown by metalorganic chemical vapor deposition on sapphire substrates. The mirror facet for a laser cavity was formed by etching of III-V nitride films without cleaving. As an active layer, the InGaN MQW structure was used. The InGaN MQW LDS produced 215 mW at a forward current of 2.3 A, with a sharp peak of light output at 417 nm that had a full width at half-maximum of 1.6 nm under the pulsed current injection at room temperature. The laser threshold current density was 4 kA/cm2. The emission wavelength is the shortest one ever generated by a semiconductor laser diode.

This item is cited by the following items in the database:

  1. The Morphology and Cathodoluminescence of GaN Thin Films
  2. The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor
  3. ECR RIE-Enhanced Low Pressure Plasma Etching of GaN/InGaN/AlGaN Heterostructures
  4. Evidence for Shallow Acceptor Levels in MBE Grown GaN
  5. Fabrication of GaN mesa structures
  6. Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method
  7. Room Temperature pulsed operation of nitride based MQW laser diodes with cleaved facets on conventional c-face sapphire substrates
  8. Room Temperature CW Operation of InGaN MQW Structure Laser Diodes
  9. Etching processes for fabrication of GaN/InGaN/AlN microdisk laser structures
  10. Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
  11. The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
  12. Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence
  13. MOVPE of Thick InGaN on Sapphire Substrate
  14. Degenerate Layer at GaN/sapphire interface: Influence on Hall-effect measurements
  15. Characterization of InGaN MQW structures for blue semiconductor laser diodes
  16. Urbach-Martienssen tails in a wurtzite GaN epilayer
  17. Electron cyclotron resonance etching of III–V nitrides in IBr/Ar plasmas
  18. Studies of Mg-GaN grown by MBE on GaAs(111)B substrates
  19. Dispersion properties of aluminum nitride as measured by an optical waveguide technique
  20. A Perspective on the GaN Injection Laser
  21. AlGaN-Based Bragg Reflectors
  22. Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN
  23. Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
  24. Physical Properties of Bulk GaN Crystals Grown by HVPE
  25. Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells
  26. Electron Beam Pumped MQW InGaN/GaN Laser
  27. Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)Si surface of 6H-SiC by MBE
  28. Effects of proton irradiation on AlGaN/InGaN/GaN green light emitting diodes
  29. Gain spectra and stimulated emission in epitaxial (In,Al) GaN thin films
  30. Growth of Ga1-xBxN by Molecular Beam Epitaxy
  31. Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
  32. Defect structure in selectively grown GaN films with low threading dislocation density
  33. New plasma chemistries for etching GaN and InN: BI3 and BBr3
  34. Electronic band structures and effective-mass parameters of wurtzite GaN and InN
  35. Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
  36. On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
  37. Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
  38. Dislocation Density of GaN Grown by Hydride Vapor Phase Epitaxy
  39. Free excitons in strained MOCVD-grown GaN layers

Contributed by Carol Trager-Cowan from cowan-physics.phys.strath.ac.uk. on Thursday, May 30, 1996 5:09:53 PM

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