Data for reference iwata-jjap-35-l289

High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2x2) and (4x4) Reflection High Energy Electron Diffraction Patterns

K IWATA, H ASAHI, SJ YU, K ASAMI, H FUJITA, M FUSHIDA, S GONDA

Japanese Journal of Applied Physics 35(3A), L289 (1996).

GaN layers are grown on (0001) sapphire substrate by electron cyclotron resonance molecular beam epitaxy (ECR-MBE) using an ECR plasma cell with ion removal magnets on the cell top for the nitrogen source. The efficiency of the ion removal magnets in this ECR plasma cell is 99%. High-quality GaN layers are obtained. In particular, (2x2) and (4x4) RHEED (reflection high-energy electron diffraction) patterns are observed during GaN growth and during cooling after growth, respectively, indicating a flat and smooth surface of GaN. These results show the superiority of the ion-removed ECR plasma cell.

This item is cited by the following items in the database:

  1. The Polarity of GaN: a Critical Review
  2. Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
  3. Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces

Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Saturday, June 15, 1996 5:29:17 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Thursday, April 28, 2005 2:14:11 PM.
© 1998 The Materials Research Society