Data for reference nakayama-jjap-35-l282

Electrical Transport Properties of p-GaN

H. Nakayama, P. Hacke, M. R. H. Khan, T. Detchprohm, K. Hiramatsu, N. Sawaki

Japanese Journal of Applied Physics 35, L282 (1996).

This item is cited by the following items in the database:

  1. GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

Contributed by A submitted manuscript, on January 5, 1998 9:52:17 AM

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