Data for reference nakamura-jjap-35-l217

InGaN MQW Structure Laser Diodes with Cleaved Mirror Facets

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto

Japanese Journal of Applied Physics 35(2B), L217 (1996).

InGaN MQW structure laser diodes fabricated from III-V nitride materials were grown by MOCVD on sapphire substrates with (11-20) orientation (A face). The mirror facet for a laser cavity was formed by cleaving the substrate along the (11-02) orientation (R-face). As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs showed a sharp peak of light output at 415.6 nm that had FWHM of 0.05 nm under pulsed current injection of 1.17 A at room temperature. The laser threshold current density was 9.6 kA/cm2.

This item is cited by the following items in the database:

  1. Study of GaN films grown by metalorganic chemical vapour deposition
  2. GaN Based p‐n Structures Grown on SiC Substrates
  3. Temperature distribution in the chamber used for crystal growth of GaN under high pressure of nitrogen
  4. Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE.
  5. Room Temperature pulsed operation of nitride based MQW laser diodes with cleaved facets on conventional c-face sapphire substrates
  6. Room Temperature CW Operation of InGaN MQW Structure Laser Diodes
  7. Hardness and fracture toughness of bulk single crystal gallium nitride
  8. Gain Spectroscopy of HVPE-Grown GaN
  9. Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire
  10. Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
  11. Studies of Mg-GaN grown by MBE on GaAs(111)B substrates
  12. A Perspective on the GaN Injection Laser
  13. MBE Growth of Strain Engineered GaN Thin Films Utilizing a Surfactant
  14. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
  15. Valence-band structure of wurtzite GaN including the spin-orbit interaction
  16. Preparation of Sapphire for High Quality III-Nitride Growth

Contributed by Toby Strite from internet-gw.zurich.ibm.ch. on Tuesday, March 12, 1996 1:41:39 PM

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