wu-jjap-35-l1648

Data for reference wu-jjap-35-l1648

Morphological and Structural Transitions in GaN Films Grown on Sapphire by Metal-Organic Chemical Vapor Deposition

XH Wu, P Fini, S Keller, EJ Tarsa, B Heying, UK Mishra, SP DenBaars, JS Speck

Japanese Journal of Applied Physics 35(12B), L1648 (1996).

The structural and morphological evolution of GaN films grown by MOCVD at high temperature (1080oC) on a low temperature grown GaN nucleation layer (NL) on (0001) sapphire were studied using atomic force microscopy (AFM), transmission electron microscopy (TEM) and photoluminescence (PL) measurements. The high temperature (HT) GaN layers were found to grow by initially forming isolated truncated hexagonal islands having {1011} facet planes and a top (0001) plane. The non-wetting or partial wetting behavior of the HT GaN on the GaN NL is attributed to both the roughness and predominantly cubic nature of the NL.

This item is cited by the following items in the database:

Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Friday, June 20, 1997 2:19:36 PM

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