ohtoshi-jjap-35-l1566

Data for reference ohtoshi-jjap-35-l1566

Crystal Orientation Effect on Valence-Subband Structures in Wurtzite-GaN Strained Quantum Wells

T Ohtoshi, A Niwa, T Kuroda

Japanese Journal of Applied Physics 35(12A), L1566 (1996).

We analyze theoretically for the first time valence-subband structures in wurtzite-GaN strained quantum wells (QWs) for various crystal orientations. The calculation is based on the Bir-Pikus effective-mass theory, where deformation potentials are determined by a semi-empirical tight-binding method. The obtained results show that the hole effective masses of strained QWs with non-(0001) orientation, in particular, around the (1012) orientation, are markedly lighter than those of (0001) cases. We also found that the optical matrix elements of non-(0001) strained QWs are twice as large as those for (0001) strained QWs.

This item is cited by the following items in the database:

Theoretical Analysis of the Threshold Current Density in GaN/AlGaN Strained QW Lasers with a Modulation-doped Structure

Contributed by Tohru HONDA from vcsel16.pi.titech.ac.jp. on Thursday, January 30, 1997 3:48:34 AM
Modified by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Friday, June 20, 1997 2:24:00 PM

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