kimura-jjap-35-l1480

Data for reference kimura-jjap-35-l1480

Surface Morphology Study for Hexagonal GaN Grown on GaAs(100)

Akitaka Kimura, A. Atsushi Yamaguchi, Akira Sakai, Haruo Sunakawa

Japanese Journal of Applied Physics 35(11B), L1480 (1996).

The surface morphology of hexagonal (h-) GaN layers grown by hydride vapor phase epitaxy on GaAs (100) substrates with several misorientation angles and directions was estimated. The surface morphology od the h-GaN epitaxial layers was very rough on GaAs (100)exact stbstrates and GaAs (100) substrates misoriented toward the [111]A direction. The morphology was greatly improved on GaAs (100) substrates misoriented toward the [111]B direction, depending on the misorientation angles. The best surface morphology in our experiment was obtained on GaAs (100) substrates misoriented by 15.8Ą toward the [111]B direction. It was also found that a Ga-rich surface was favorable for GaN growth with good morphology.

Contributed by Tohru HONDA from vcsel16.pi.titech.ac.jp. on Thursday, January 30, 1997 6:22:56 AM

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