ohba-jjap-35-l1013

Data for reference ohba-jjap-35-l1013

Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate

Y Ohba, A Hatano

Japanese Journal of Applied Physics 35(8B), L1013 (1996).

Metalorganic chemical vapor deposition (MOCVD) growth of AlN on sapphire substrates was investigated, with the aim of device quality AlN/GaN/AlN double heterostructures. Growth temperature as high as 1300^oC was required to obtain AlN epitaxial layers with sharp X-ray diffraction peaks. By growing AlN at the high growth temperature, residual stress at the heterointerface was effectively reduced. The AlN epitaxial layers with smooth surfaces were grown using a low V/III ratio together with the high growth temperature. AlN/GaN/AlN double heterostructures with appropriate layer thicknesses for DH lasers and flat heterointerfaces were grown on sapphire substrates.

Contributed by A.E. Nikolaev from 194.85.224.35 on Sunday, October 13, 1996 2:35:54 PM

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